G30N60C3D 查看數據表（PDF） - Unspecified
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G30N60C3D Datasheet PDF : 8 Pages
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Specifications HGTG30N60C3D
Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Gate-Emitter Leakage Current
Switching SOA
BVCES
IC = 250µA, VGE = 0V
600
BVECS
IC = 10mA, VGE = 0V
15
ICES
VCE = BVCES
TC = +25oC
-
VCE = BVCES
TC = +150oC
-
VCE(SAT)
IC = IC110,
TC = +25oC
-
VGE = 15V
TC = +150oC
-
VGE(TH)
IC = 250µA,
TC = +25oC
3.0
VCE = VGE
IGES
SSOA
VGE = ±20V
TJ = +150oC,
VGE = 15V,
RG = 3Ω,
L = 100µH
-
VCE(PK) = 480V
200
VCE(PK) = 600V
60
-
-
V
25
-
V
-
250
µA
-
3.0
mA
1.5
1.8
V
1.7
2.0
V
5.2
6.0
V
-
±100
nA
-
-
A
-
-
A
Gate-Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 1)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance
VGEP
QG(ON)
tD(ON)I
tRI
tD(OFF)I
tFI
EON
EOFF
VEC
tRR
RθJC
IC = IC110, VCE = 0.5 BVCES
IC = IC110,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
TJ = +150oC,
ICE = IC110,
VCE(PK) = 0.8 BVCES,
VGE = 15V,
RG = 3Ω,
L = 100µH
IEC = 30A
IEC = 30A, dIEC/dt = 100A/µs
IEC = 1.0A, dIEC/dt = 100A/µs
IGBT
Diode
-
8.1
-
V
-
162
180
nC
-
216
250
nC
-
40
-
ns
-
45
-
ns
-
320
400
ns
-
230
275
ns
-
1050
-
µJ
-
2500
-
µJ
-
1.75
2.2
V
-
52
60
ns
-
42
50
ns
-
-
0.6
oC/W
-
-
1.3
oC/W
NOTE:
1. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-
On losses include diode losses.
2
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