G30N60C3D 查看數據表（PDF） - Unspecified

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G30N60C3D

63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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HGTG30N60C3D

Operating Frequency Information

Handling Precautions for IGBTs

Operating frequency information for a typical device (Figure 13)

is presented as a guide for estimating device performance

for a specific application. Other typical frequency vs collector

current (ICE) plots are possible using the information shown

for a typical unit in Figures 4, 7, 8, 11 and 12. The operating

frequency plot (Figure 13) of a typical device shows fMAX1 or

fMAX2 whichever is smaller at each point. The information is

based on measurements of a typical device and is bounded

by the maximum rated junction temperature.

fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Dead-

time (the denominator) has been arbitrarily held to 10% of

the on-state time for a 50% duty factor. Other definitions are

possible. tD(OFF)I and tD(ON)I are defined in Figure 21.

Device turn-off delay can establish an additional frequency

limiting condition for an application other than TJMAX. tD(OFF)I

is important when controlling output ripple under a lightly

loaded condition.

fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The

allowable dissipation (PD) is defined by PD = (TJMAX - TC)/

RθJC. The sum of device switching and conduction losses

must not exceed PD. A 50% duty factor was used (Figure

13) and the conduction losses (PC) are approximated by

PC = (VCE x ICE)/2.

EON and EOFF are defined in the switching waveforms

shown in Figure 21. EON is the integral of the instantaneous

power loss (ICE x VCE) during turn-on and EOFF is the inte-

gral of the instantaneous power loss during turn-off. All tail

losses are included in the calculation for EOFF; i.e. the col-

lector current equals zero (ICE = 0).

Insulated Gate Bipolar Transistors are susceptible to gate-

insulation damage by the electrostatic discharge of energy

through the devices. When handling these devices, care

should be exercised to assure that the static charge built in

the handler’s body capacitance is not discharged through the

device. With proper handling and application procedures,

however, IGBTs are currently being extensively used in

production by numerous equipment manufacturers in military,

industrial and consumer applications, with virtually no damage

problems due to electrostatic discharge. IGBTs can be

handled safely if the following basic precautions are taken:

1. Prior to assembly into a circuit, all leads should be kept

shorted together either by the use of metal shorting

springs or by the insertion into conductive material such

as †“ECCOSORBD LD26” or equivalent.

2. When devices are removed by hand from their carriers,

the hand being used should be grounded by any suitable

means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removed from

circuits with power on.

5. Gate Voltage Rating - Never exceed the gate-voltage rat-

ing of VGEM. Exceeding the rated VGE can result in

permanent damage to the oxide layer in the gate region.

6. Gate Termination - The gates of these devices are essen-

tially capacitors. Circuits that leave the gate open-circuited

or floating should be avoided. These conditions can result

in turn-on of the device due to voltage buildup on the input

capacitor due to leakage currents or pickup.

7. Gate Protection - These devices do not have an internal

monolithic zener diode from gate to emitter. If gate pro-

tection is required an external zener is recommended.

†Trademark Emerson and Cumming, Inc.

7

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