TC850CLW 查看數據表（PDF） - TelCom Semiconductor Inc => Microchip

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TC850CLW

15-BIT, FAST-INTEGRATING CMOS ANALOG-TO-DIGITAL CONVERTER

TelCom Semiconductor Inc => Microchip 

15-BIT, FAST-INTEGRATING CMOS

ANALOG-TO-DIGITAL CONVERTER

TC850

ABSOLUTE MAXIMUM RATINGS*

Positive Supply Voltage (VDD to GND) ....................... +6V

Negative Supply Voltage (VSS to GND) ..................... – 9V

Analog Input voltage (IN+ or IN–) ..................... VDD to VSS

Voltage Reference Input

(REF1+, REF1–, REF2+) .............................. VDD to VSS

Logic Input Voltage ................ VDD + 0.3V to GND – 0.3V

Current Into Any Pin .................................................10mA

While Operating ................................................100µA

Ambient Operating Temperature Range

C Device ................................................ 0°C to +70°C

I Device ............................................. – 25°C to +85°C

Lead Temperature (Soldering, 10 sec) ................. +300°C

Package Power Dissipation (TA ≤ 70°C)

CerDIP ..............................................................2.29W

Plastic DIP ........................................................ 1.23W

Plastic PLCC .................................................... 1.23W

*Static-sensitive device. Unused devices must be stored in conductive

material. Protect devices from static discharge and static fields. Stresses

above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. These are stress ratings only and functional

operation of the device at these or any other conditions above those

indicated in the operational sections of the specifications is not implied.

Exposure to Absolute Maximum Rating Conditions for extended periods

may affect device reliability.

ELECTRICAL CHARACTERISTICS: VS = ±5V, fCLK = 61.44 kHz, VFS = 3.2768V, TA = 25°C, Fig. 1 Test Circuit,

unless otherwise specified.

Symbol Parameter

Zero-Scale Error

End Point Linearity Error

Differential Nonlinearity

IIN

Input Leakage Current

VCMR

CMRR

Common-Mode Voltage Range

Common-Mode Rejection Ratio

Full-Scale Gain Temperature

Coefficient

eN

IS+

IS–

VOH

VOL

IOP

VIH

IL

IPU

IPD

IOSC

CIN

COUT

tCE

tRE

tDHC

tDHR

tOP

Zero-Scale Error

Temperature Coefficient

Full-Scale Magnitude

Symmetry Error

Input Noise

Positive Supply Current

Negative Supply Current

Output High Voltage

Output Low Voltage

Output Leakage Current

Input High Voltage

Input Low Voltage

Input Pull-Up Current

Input Pull-Down Current

Oscillator Output Current

Input Capacitance

Output Capacitance

Chip-Enable Access Time

Read-Enable Access Time

Data Hold From CS or CE

Data Hold From RD

OVR/POL Data Access Time

Test Conditions

VIN = 0V

–VFS ≤ VIN ≤ +VFS

VIN = 0V, TA = 25°C

0°C ≤ TA ≤ +70°C

– 25° ≤ TA ≤ +85°C

Over Operating Temperature Range

VIN = 0V, VCM = ±1V

External Ref Temperature

Coefficient = 0 ppm/°C

0°C ≤ TA ≤ +70°C

VIN = 0V

0°C ≤ TA ≤ +70°C

VIN = ±3.275V

Min

—

—

—

—

—

VSS + 1.5

—

Typ Max

±0.25

±1

±0.1

30

—

1.1

—

80

±0.5

±2

±0.5

75

—

3

VDD – 1.5

—

Unit

LSB

LSB

LSB

pA

nA

V

dB

—

2

5

ppm/°C

—

0.3

2

µV/°C

—

0.5

2

LSB

Not Exceeded 95% of Time

—

—

—

IO = 500 µA

3.5

IO = 1.6 mA

—

Pins 8 – 15, High-Impedance State

—

Note 3

3.5

Note 3

—

Pins 2, 3, 4, 6, 7; VIN = 0V

—

Pins 1, 5; VIN = 5V

—

Pin 18, VOUT = 2.5V

—

Pins 1 – 7, 17

—

Pins 8 – 15, High-Impedance State

—

CS or CE, RD = LOW (Note 1)

—

CS = HIGH, CE = LOW (Note 1)

—

RD = LOW (Note 1)

—

CS = HIGH, CE = LOW (Note 1)

—

CS = HIGH, CE = LOW, RD = LOW (Note 1)

—

30

2

2

4.9

0.15

0.1

2.3

2.1

4

14

140

1

15

230

190

250

210

140

—

µVP-P

3.5

mA

3.5

mA

—

V

0.4

V

1

µA

—

V

1

V

—

µA

—

µA

—

µA

—

pF

—

pF

450

nsec

450

nsec

450

nsec

450

nsec

300

nsec

3-78

TELCOM SEMICONDUCTOR, INC.

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