IRF7403 查看數據表（PDF） - International Rectifier

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IRF7403

HEXFET Power MOSFET

International Rectifier 

IRF7403

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(ON)

Static Drain-to-Source On-Resistance

VGS(th)

gfs

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

LD

Internal Drain Inductance

LS

Ciss

Coss

Crss

Internal Source Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

30 ––– ––– V

––– 0.024 ––– V/°C

––– ––– 0.022 Ω

––– ––– 0.035

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 4.0A ƒ

VGS = 4.5V, ID = 3.4A ƒ

1.0 ––– ––– V VDS = VGS, ID = 250µA

8.4 ––– ––– S VDS = 15V, ID = 4.0A

––– ––– 1.0 µA

––– ––– 25

––– ––– 100 nA

––– ––– -100

VDS = 24V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 125°C

VGS = 20V

VGS = -20V

––– ––– 57

ID = 4.0A

––– ––– 6.8

––– ––– 18

nC VDS = 24V

VGS = 10V, See Fig. 6 and 12 ƒ

––– 10 –––

VDD = 15V

––– 37 ––– ns ID = 4.0A

––– 42 –––

RG = 6.0Ω

––– 40 –––

RD = 3.7Ω, See Fig. 10 ƒ

D

––– 2.5 –––

nH Between lead tip

and center of die contact G

––– 4.0 –––

S

––– 1200 –––

VGS = 0V

––– 450 ––– pF VDS = 25V

––– 160 –––

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

––– ––– 3.1

––– ––– 34

––– ––– 1.0

––– 52 78

––– 93 140

MOSFET symbol

D

showing the

A

integral reverse

G

p-n junction diode.

S

V TJ = 25°C, IS = 2.0A, VGS = 0V ƒ

ns TJ = 25°C, IF = 4.0A

nC di/dt = 100A/µs ƒ

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.

‚ ISD ≤ 4.0A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

„ Surface mounted on FR-4 board, t ≤ 10sec.

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