2SK2481 查看數據表（PDF） - Renesas Electronics
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2SK2481 Datasheet PDF : 8 Pages
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2SK2481
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Drain to Source On-State Resistance
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
RDS(on)
VGS(off)
| yfs |
IDSS
IGSS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
MIN.
2.5
1.0
TYP.
3.2
900
130
25
17
7
63
8
30
5
13
1.0
710
3.5
MAX.
4.0
3.5
100
±100
UNIT
Ω
V
S
µA
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
TEST CONDITIONS
VGS = 10 V, ID = 2.0 A
VDS = 10 V, ID = 1 mA
VDS = 20 V, ID = 2.0 A
VDS = VDSS, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 2.0 A
VGS = 10 V
VDD = 150 V
RG = 10 Ω
ID = 4.0 A
VDD = 450 V
VGS = 10 V
IF = 4.0 A, VGS = 0
IF = 4.0 A, VGS = 0
di/dt = 50 A/µs
Test Circuit 1 Avalanche Capability
D.U.T.
RG = 25 Ω
PG
VGS = 20 - 0 V
50 Ω
L
VDD
IAS
ID
VDD
BVDSS
VDS
Starting Tch
Test Circuit 3 Gate Charge
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
Test Circuit 2 Switching Time
D.U.T.
PG.
RG
RG = 10 Ω
VGS
0
t
t = 1us
Duty Cycle ≤ 1 %
RL
VGS
VGS
Wave Form
0 10 %
VDD
ID
VGS (on)
90 %
ID
Wave Form
0 10 %
td (on)
ID
tr
td (off)
90 %
90 %
10 %
tf
ton
toff
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
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