STN3PF06 查看數據表（PDF） - Unspecified
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STN3PF06 Datasheet PDF : 12 Pages
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STN3PF06
1
Electrical ratings
Electrical ratings
Note:
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
VGS
ID
ID
IDM (1)
PTOT
dv/dt (2)
Drain-source voltage (VGS = 0)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Derating factor
Peak diode recovery voltage slope
Tj
Operating junction temperature
Tstg
Storage temperature
1. Pulse width limited by safe operating area
2. ISD ≤ 3A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS
Table 3. Thermal data
60
±20
2.5
1.5
10
2.5
0.02
6
-65 to 150
V
V
A
A
A
W
W/°C
V/ns
°C
Symbol
Parameter
Value
Unit
Rthj-pcb
Rthj-a
Thermal resistance junction-pcb board max
Thermal resistance junction-ambient max(1)
Tl
Maximum lead temperature for soldering purpose
1. Surface mounted
50
°C/W
62.5
°C/W
260
°C
For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
3/12
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