STN3PF06 查看數據表（PDF） - Unspecified
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STN3PF06 Datasheet PDF : 12 Pages
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STN3PF06
Electrical characteristics
Note:
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
Test conditions
VDD= 30 V, ID=6 A,
RG=4.7 Ω, VGS=10 V
(see Figure 13)
VDD= 30 V, ID=6 A,
RG=4.7 Ω, VGS=10 V
(see Figure 13)
Vclamp= 48 V, ID=12 A,
RG=4.7 Ω, VGS=10 V
(see Figure 13)
Min. Typ. Max. Unit
20
ns
40
ns
40
ns
10
ns
10
ns
17
ns
30
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 1.5 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A, di/dt = 100 A/µs
VDD = 30 V, Tj =150 °C
1. Pulse width limited by Tjmax
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2.5 A
10 A
1.2 V
100
ns
260
µC
5.2
A
For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
5/12
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