Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 12 A
VGS = 10 V, ID = 12 A
VDS = 10 V, ID = 12 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
2SK2232
Min Typ. Max Unit
—
—
±10
μA
—
— 100 μA
60
—
—
V
0.8
—
2.0
V
— 0.057 0.08
Ω
— 0.036 0.046
10
16
—
S
— 1000 —
— 200 —
pF
— 550 —
—
20
—
Turn−on time
ton
Switching time
Fall time
tf
—
30
—
ns
—
55
—
Turn−off time
Total gate charge (Gate−source
plus gate–drain)
Gate−source charge
Gate−drain (“miller”) charge
toff
Qg
Qgs
VDD ≈ 48 V, VGS = 10 V, ID = 25 A
Qgd
— 130 —
—
38
—
—
25
—
nC
—
13
—
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovered charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
Min
—
—
—
—
IDR = 25 A, VGS = 0 V
—
—
IDR = 25 A, VGS = 0 V, dIDR / dt = 50 A / μs
—
Typ. Max Unit
—
25
A
—
100
A
—
−1.8
V
50
—
ns
35
—
μC
Marking
K2232
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-17