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零件编号
产品描述 (功能)
TPC8107(2003) 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
TPC8107
(Rev.:2003)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
Toshiba
TPC8107 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
I
D
– V
DS
-
20
-
10
-
4
-
2.8
-
2.6
-
8
-
16
-
6
-
3
-
12
Common source
Ta
=
25°C
Pulse test
-
2.4
-
8
-
2.2
-
4
VGS
= -
2 V
0
0
-
0.2
-
0.4
-
0.6
-
0.8
-
1.0
Drain-source voltage V
DS
(V)
TPC8107
I
D
– V
DS
-
50
-
4
-
3
Common source
-
10
-
8
-
2.8
-
40
-
6
Ta
=
25°C
Pulse test
-
30
-
2.6
-
20
-
10
0
0
-
2.4
-
2.2
VGS
= -
2 V
-
1
-
2
-
3
-
4
-
5
Drain-source voltage V
DS
(V)
-
50
-
40
-
30
-
20
-
10
0
0
I
D
– V
GS
Common source
VDS
= -
10 V
Pulse test
25
100
Ta
= -
55°C
-
1
-
2
-
3
-
4
-
5
Gate-source voltage V
GS
(V)
-
0.5
-
0.4
-
0.3
-
0.2
-
0.1
0
0
V
DS
– V
GS
Common source
Ta
=
25°C
Pulse test
-
3
ID
= -
13 A
-
6.5
-
4
-
8
-
12
-
16
-
20
Gate-source voltage V
GS
(V)
|Y
fs
| – I
D
100
25
30
Ta
= -
55°C
100
10
3
1
Common source
VDS
= -
10 V
0.3
Pulse test
-
0.1
-
0.3
-
1
-
3
-
10
-
30
-
100
Drain current I
D
(A)
R
DS (ON)
– I
D
100
30
10
VGS
= -
4 V
-
10
3
1
Common source
Ta
=
25°C
0.3
Pulse test
-
0.1
-
0.3
-
1
-
3
-
10
-
30
-
100
Drain current I
D
(A)
4
2003-02-20
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