U1BC44 查看數據表（PDF） - Toshiba
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U1BC44 Datasheet PDF : 4 Pages
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U1BC44,U1GC44,U1JC44
TOSHIBA RECTIFIER SILICON DIFFUSED JUNCTION TYPE
U1BC44, U1GC44, U1JC44
FOR HYBRID USE
z Average Forward Current
z Repetitive Peak Reverse Voltage
z Mini Plastic Mold Package
: IF (AV) = 1.0 A
: VRRM = 100 V, 400 V, 600 V
Unit: mm
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak
Reverse Voltage
U1BC44
U1GC44
U1JC44
VRRM
100
400
V
600
Average
On Ceramic Substrate
1.0
(Ta = 75°C)
Forward
IF (AV)
A
Current
On Glass−epoxy
0.9
Substrate
(Ta = 25°C)
Peak One Cycle Surge Forward
Current (Non−Repetitive)
IFSM
30 (50Hz)
A
33 (60Hz)
JEDEC
―
Junction Temperature
Storage Temperature Range
Tj
−40~150
°C
JEITA
―
Tstg
−40~150
°C
TOSHIBA
3−4D1A
Weight: 0.06g
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse
Current
Thermal Resistance
SYMBOL
TEST CONDITION
VFM
IFM = 1.0A
IRRM
VRRM = Rated
Rth (j−a)
On ceramic substrate
DC
On glass-epoxy substrate
MIN TYP. MAX UNIT
―
―
1.2
V
―
―
10
μA
―
―
60
°C / W
―
―
120
MARKING
Abbreviation Code
BC
GC
JC
Part No.
U1BC44
U1GC44
U1JC44
1
2006-11-06
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