NTD40N03R 查看數據表（PDF） - ON Semiconductor
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NTD40N03R Datasheet PDF : 8 Pages
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NTD40N03R
20
10 V
8V
16
6V
4V
12
3.5 V
3.4 V
3.2 V
20
VDS ≥ 10 V
16
12
8
3V
4
2.8 V
VGS = 2.6 V
0
0
2
4
6
8
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
8
TJ = 25°C
4
TJ = 125°C
TJ = −55°C
0
0
1
2
3
4
5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.040
0.032
VGS = 10 V
0.024
0.016
TJ = 150°C
TJ = 125°C
0.008
TJ = 25°C
TJ = −55°C
0
0
4
8
12
16
20
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.040
0.032
0.024
TJ = 150°C
TJ = 125°C
TJ = 25°C
0.016
TJ = −55°C
0.008
VGS = 4.5 V
0
0
4
8
12
16
20
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Temperature
1.8
ID = 10 A
1.6
VGS = 10 V
10,000
VGS = 0 V
1.4
TJ = 150°C
1.2
1000
1
TJ = 125°C
0.8
0.6
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100
0
5
10
15
20
25
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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