SIR472 查看數據表（PDF） - Unspecified
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SIR472 Datasheet PDF : 13 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
80
VGS = 10 V thru 4 V
64
64
SiR472ADP
Vishay Siliconix
48
48
TC = 25 °C
VGS = 3 V
32
32
16
0
0.0
0.011
VGS = 2 V
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.010
0.009
0.008
0.007
VGS = 4.5 V
VGS = 10 V
0.006
0
16
32
48
64
80
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 10 A
8
VDS = 15 V
6
VDS = 10 V
4
VDS = 20 V
16 TC = 125 °C
TC = - 55 °C
0
0.0
1.0
2.0
3.0
4.0
5.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1500
Ciss
1200
900
600
Coss
300
Crss
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.7
ID = 15 A
1.5
VGS = 10 V
1.3
1.1
VGS = 4.5 V
2
0.9
0
0
4
8
12
16
20
Qg - Total Gate Charge (nC)
0.7
- 50 - 25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S14-0133-Rev. B, 27-Jan-14
3
Document Number: 62880
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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