M12L16161A 查看數據表（PDF） - Unspecified
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M12L16161A Datasheet PDF : 28 Pages
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ESMT
M12L16161A (2Q)
Operation Temperature Condition -40°C~85°C
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = -40 to 85 °C VIH(min)/VIL(max)=2.0V/0.8V)
Parameter
Symbol
Test Condition
CAS
Latency
Version
-5
-7
Operating Current
(One Bank Active)
ICC1
Burst Length = 1
tRC ≥ tRC (min), tCC ≥ tCC (min), IOL= 0mA
100
80
Precharge Standby
ICC2P
CKE ≤ VIL(max), tCC =15ns
2
Current in power-down
mode
ICC2PS CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞
2
Precharge Standby
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC =15ns
25
Current in non
Input signals are changed one time during 30ns
power-down mode
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
10
Active Standby Current ICC3P
CKE ≤ VIL(max), tCC =15ns
10
in power-down mode
ICC3PS CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞
10
CKE ≥ VIH(min), CS ≥ VIH(min), tCC=15ns
Active Standby Current
in non power-down
mode
ICC3N
Input signals are changed one time during 2clks
All other pins ≥ VDD-0.2V or ≤ 0.2V
25
(One Bank Active)
ICC3NS
CKE ≥ VIH (min), CLK ≤ VIL(max), tCC= ∞
Input signals are stable
10
Operating Current
ICC4
IOL= 0mA, Page Burst
3
100
80
(Burst Mode)
All Band Activated, tCCD = tCCD (min)
2
100
80
Refresh Current
ICC5
Self Refresh Current
ICC6
tRFC ≥ tRFC(min)
CKE ≤ 0.2V
100
80
1
Note: 1.Measured with outputs open. Addresses are changed only one time during tCC(min).
2.Refresh period is 32ms. Addresses are changed only one time during tCC(min).
Unit Note
mA 1
mA
mA
mA
mA
mA
mA
mA 1
mA 2
mA
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2012
Revision : 1.0
4/28
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