IDC08S60CE 查看數據表（PDF） - Infineon Technologies

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IDC08S60CE

2nd generation thinQ!™ SiC Schottky Diode

Infineon Technologies 

IDC08S60CE

2nd generation thinQ!TM SiC Schottky Diode

Features:

A

Applications:

 Revolutionary Semiconductor Material -  SMPS, PFC, snubber

Silicon Carbide

C

 Switching Behaviour Benchmark

 No Reverse Recovery / No Forward

Recovery

 Temperature Independent Switching

Behaviour

 Qualified According to JEDEC1) Based on

Target Applications

Chip Type

IDC08S60CE

VR

IFn

600V 8A

Die Size

1.658 x 1.52 mm2

Package

sawn on foil

Mechanical Parameters

Die size

Area total

1.658x 1.52

2.52

mm2

Anode pad size

1.421 x 1.283

Thickness

355

µm

Wafer size

100

mm

Max. possible chips per wafer

2682

Passivation frontside

Photoimide

Pad metal

3200 nm AlSiCu

Backside metal

Ni Ag –system

Die bond

Electrically conductive epoxy glue and soft solder

Wire bond

Al, 500µm

Reject ink dot size

Storage environment1)

for original and

sealed MBB bags

for open MBB

bags

 0.65mm; max 1.2mm

Ambient atmosphere air, Temperature 17°C – 25°C,

< 6 month

Acc. to IEC60721-3-3: Atmosphere >99% Nitrogen or inert

gas, Humidity <25%RH, Temperature 17°C – 25°C, < 6 month

1) Designed for storage conditions according to Infineon TR14 (Application Note “Storage of Products Supplied by Infineon

Technologies)

Designed for climate condition under operation according to IEC60721-3-3, class 3K3

Edited by INFINEON Technologies, IFAG IPC TD VLS, L4714E, Edition 1.2, 05.09.2012

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