BH12PB1WHFV 查看數據表（PDF） - ROHM Semiconductor
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BH12PB1WHFV
ROHM Semiconductor
BH12PB1WHFV Datasheet PDF : 11 Pages
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BH□□PB1WHFV Series
Technical Note
11. Preventing Rush Current
By attaching the Rss and Css time constants to the STBY pin, sudden rises in the regulator output voltage can be
prevented, dampening the flow of rush current to the output capacitors. The larger the time constant used, the greater the
resulting reduction. However, large time constants also result in longer startup times, so the constant should be selected
after considering the conditions in which the IC is to be used.
100
Rss = 10 k
IO = no load
10
1.0 m
100
0.01
0.1
1.0
Slow sFtarretqcuaepnaccyitaf[nHcze]Css (F)
Fig.33 VOUT Startup Time vs CSS Capacitance (Reference)
12. Regarding input Pin of the IC (Fig.34)
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode
or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used.
Pin A
N
N P+
Parasitic element
Resistor
Pin A
P
P+ N
P substrate
GND
Parasitic
element
Transistor (NPN)
Pin B C B
Pin B
E
N P+
N
P
P+ N
P substrate
Parasitic element
GND
GND
B
C
E
Parasitic
element
GND
Other adjacent elements
Fig.34
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© 2011 ROHM Co., Ltd. All rights reserved.
9/10
2011.01 - Rev.B
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