ULN2003AP 查看數據表（PDF） - Toshiba

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ULN2003AP

TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

Toshiba 

ULN2003,04AP/AFW

RECOMMENDED OPERATING CONDITIONS (Ta = −40~85°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN TYP. MAX UNIT

Output Sustaining Voltage

Output Current

AP

AFW

Input Voltage

Input Voltage

(Output On)

ULN2003A

ULN2004A

Input Voltage

(Output Off)

ULN2003A

ULN2004A

Clamp Diode Reverse Voltage

Clamp Diode Forward Current

Power Dissipation

AP

AFW

VCE (SUS)

0

Tpw = 25 ms Duty = 10%

0

7 Circuits

Duty = 50%

0

IOUT

Ta = 85°C

Duty = 10%

0

Tj = 120°C Duty = 50%

0

VIN

0

VIN (ON)

IOUT = 400 mA

hFE = 800

2.8

6.2

0

VIN (OFF)

0

VR

―

IF

Ta = 85°C

PD

Ta = 85°C

―

―

(Note) ―

―

50

V

―

370

―

130

mA / ch

―

233

―

70

―

24

V

―

24

V

―

24

―

0.7

V

―

1.0

―

50

V

―

350 mA

― 0.76

W

― 0.325

Note: On glass epoxy PCB (30 × 30 × 1.6 mm Cu 50%)

3

2001-07-05

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