1N5221B-G 查看數據表（PDF） - ComChip

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产品描述 (功能)

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1N5221B-G

Glass Silicon Zener Diode

ComChip 

Glass Silicon Zener Diode

1N5221B-G Thru. 1N5267B-G

Voltage: 2.4 to 75 Volts

Power: 0.5 Watts

RoHS Device

Comchip

SMD Diode Specialist

Features

-Planar Die Construction

-500mW Power Dissipation

-Ideally Suited for Automated Assembly Processes

DO-35

1.02(26.00) Min.

Mechanical data

-Case: Molded plastic, DO-35

-Terminals : Solderable per MIL-STD-750,Method

Method 2026

-Polarity: Indicated by cathode band

-Marking: Type number

-Weight: 0.13gram

0.079(2.00)Max.

0.165(4.20)Max.

1.02(26.00) Min.

0.020(0.52)Typ.

Dimensions in inches and (millimeter)

Maximum Ratings and Electrical Characteristics

(TA=25°C, unless otherwise noted)

Parameter

Symbol

Value

Power dissipation at Tamb=25°C

PToT

500

Junction temperature

Storage temperature range

TJ

TSTG

175

-65 ~ +175

Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.

Unit

mW

°C

°C

Parameter

Symbol

Min

Max

Thermal resistance (junction to ambient air)

RθJA

0.3*

Forward voltage at IF = 200mA

VF

1.1

Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.

Unit

K/mW

V

QW-BZ001

REV: B

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