STPS20L60 查看數據表（PDF） - STMicroelectronics
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STPS20L60 Datasheet PDF : 10 Pages
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Characteristics
1
Characteristics
STPS20L60C
Table 2. Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
60
IF(RMS) Forward rms current
30
IF(AV) Average forward current
TC = 140 °C Per diode
10
= 0.5
Per device
20
IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal
220
IRRM Repetitive peak reverse current
tp = 2 µs square F=1 kHz
1
PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C
Tstg Storage temperature range
Tj
Maximum operating junction temperature(1)
dV/dt Critical rate of rise reverse voltage
1.
d----P-----t--o----t
dTj
R-----t--h-----1--j---–----a----
thermal runaway condition for a diode on its own heatsink
Table 3. Thermal resistances
5800
-65 to + 175
150
10000
V
A
A
A
A
W
°C
°C
V/µs
Symbol
Parameter
Value
Unit
Rth (j-c)
Rth (c)
Junction to case
Coupling
Per diode
1.6
Total
0.85
0.1
C/W
C/W
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode2) x Rth(c)
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min. Typ. Max. Unit
IR (1)
Tj = 25 °C
Reverse leakage current
Tj = 125 °C
VR = VRRM
Tj = 25 °C IF = 10 A
VF (1) Forward voltage drop
Tj = 125 °C
Tj = 25 °C
IF = 10 A
IF = 20A
Tj = 125 °C IF = 20A
1. Pulse test: tp = 380 µs, < 2%
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.014 x IF2(RMS)
350 µA
65 95 mA
0.6
0.48 0.56
V
0.74
0.62 0.7
2/10
DocID6427 Rev 4
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