74HCT00D 查看數據表（PDF） - NXP Semiconductors.
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74HCT00D Datasheet PDF : 16 Pages
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NXP Semiconductors
74HC00; 74HCT00
Quad 2-input NAND gate
Table 7. Dynamic characteristics …continued
GND = 0 V; CL = 50 pF; for load circuit see Figure 7.
Symbol Parameter
Conditions
Min
CPD
power dissipation per package; VI = GND to VCC [3] -
capacitance
74HCT00
tpd
propagation delay nA, nB to nY; see Figure 6
[1]
VCC = 4.5 V
-
VCC = 5.0 V; CL = 15 pF
tt
transition time
VCC = 4.5 V; see Figure 6
CPD
power dissipation per package;
capacitance
VI = GND to VCC 1.5 V
-
[2]
-
[3]
-
[1] tpd is the same as tPHL and tPLH.
[2] tt is the same as tTHL and tTLH.
[3] CPD is used to determine the dynamic power dissipation (PD in W):
PD = CPD VCC2 fi N + (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL VCC2 fo) = sum of outputs.
25 C
Typ
22
12
10
-
22
40 C to +125 C Unit
Max Max
Max
(85 C) (125 C)
-
-
- pF
-
24
29 ns
-
-
- ns
-
29
22 ns
-
-
- pF
11. Waveforms
VI
nA, nB input
GND
VOH
nY output
VOL
VM
tPHL
VY
tTHL
VM
VX
tPLH
tTLH
Fig 6.
Measurement points are given in Table 9.
VOL and VOH are typical voltage output levels that occur with the output load.
Input to output propagation delays
001aai814
Table 8. Measurement points
Type
Input
74HC00
74HCT00
VM
0.5VCC
1.3 V
Output
VM
0.5VCC
1.3 V
VX
0.1VCC
0.1VCC
74HC_HCT00
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 14 December 2011
VY
0.9VCC
0.9VCC
© NXP B.V. 2011. All rights reserved.
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