FPS-4N 查看數據表（PDF） - Directed Energy, Inc. An IXYS Company

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FPS-4N

DC To 28MHz Pulse Width Agile Gate Drive Module

Directed Energy, Inc. An IXYS Company 

THE PULSE OF THE FUTURE

SPECIFICATIONS (All specifications measured into a 2000pF load (typical DE-275 MOSFET input capacitance)

PARAMETER

Output Gate Drive

Rise Time (10% to 90%)

VALUE

3ns ±1ns

Max. Pulse Recurrence Frequency

Pulse Width

28MHz driving a 2000pF load (typical

DE-275 CISS)

19MHz driving a 3500pF load (typical

DE-375 CISS)

<15ns to DC

Throughput Delay

Jitter

30ns typical

<50ps 1st Sigma

3ns Typical Rise Time, 2000pF Load

(2.5V/Div Vert. Scale, 10ns/Div Horiz. Scale)

Inputs

Input Control Gate

Support Power

TTL into 50Ω

+5VDC @ <0.1A

+15VDC @ 0.5A (no gate drive), ~2.5A

@ 13.56MHz, 2000pF load (1)

General

Dimensions

6.0” (15.2cm) L x 2.5” (6.35 cm) W

Cooling

50-100CFM air flow required, depend-

ing upon frequency

SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTICE

<15ns Min. Pulse Width, 2000pF Load

(2V/Div Vert. Scale, 25ns/Div Horiz. Scale)

(1) +15VDC support power requirements are highly dependent on frequency and load capacitance.

The +15VDC power requirements are approximated by the formula 0.5A + CV2F, where C is the

input capacitance (CISS) of the MOSFET being driven, V is the gate drive voltage (typically 15V),

and F is the pulse repetition frequency.

28MHz Max. Frequency, 2000pF Load

(2V/Div Vert. Scale, 50ns/Div Horiz. Scale)

FPS-4N Mechanical Layout And Mounting Hole Locations

Doc #9200-0219 Rev 1

© 2000, Directed Energy, Inc.

Directed Energy, Inc.

An IXYS Company

2401 Research Blvd., Suite 108

Fort Collins, CO USA 80526

970-493-1901 Fax: 970-493-1903

Email: deiinfo@directedenergy.com

Web: http://www.directedenergy.com

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