SB10100 查看數據表（PDF） - Micro Electro Magnetical Tech

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SB10100

SCHOTTKY DIE SPECIFICATION

Micro Electro Magnetical Tech 

Micro-Electro-Magnetical Tech Co.

SCHOTTKY DIE SPECIFICATION

General Description: 100 V 10 A Standard VF

TYPE: SB10100

Single Anode

ELECTRICAL CHARACTERISTICS

DC Blocking Voltage: Ir=1mA(for wafer form)

Ir=0.5mA (for dice form)

Average Rectified Forward Current

Maximum Instantaneous Forward Voltage

@ 10 Amperes,Ta= 25°C

SYM

VRRM

IFAV

VF MAX

Spec. Limit

100

10

0.83

Maximum Instantaneous Reverse Voltage

VR= 100 Volt, Ta=25°C

IR MAX

0.2

Maximum Junction Capacitance @ 0V, 1MHZ

MAXIMUM RATINGS

Nonrepetitive Peak Surge Current

Operating Junction Temperature

Storage Temperatures

Cj MAX

IFSM

Tj

TSTG

200

-65 to +125

-65 to +125

Specification apply to die only. Actual performance may degrade when assembled.

MEMT does not guarantee device performance after assembly.

Data sheet information is subjected to change without notice.

DICE OUTLINE DRAWING

Die Sort UNIT

105 Volt

Amp

0.82 Volt

0.18 mA

pF

Amp

°C

°C

A

C

B

Top-side Metal

SiO2 Passivation

D

P+ Guard Ring

Back-side Metal

DIM

ITEM

um2

Mil2

A Die Size

2590 101.97

B Top Metal Pad Size 2490 98.0

C Passivation Seal

2510 98.8

D Thickness (Min)

254

10

Thickness (Max)

305

12

PS:

(1)Cutting street width is around 80um(3.14mil).

(2)Both of top-side and back-side metals are Ti/Ni/Ag.

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