STPS640CB 查看數據表（PDF） - STMicroelectronics
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STPS640CB Datasheet PDF : 8 Pages
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Characteristics
STPS640C
1
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, per diode, unless otherwise specified)
Symbol
Parameter
Value
Uni
t
VRRM Repetitive peak reverse voltage
40
V
IF(RMS) Forward rms current
6
A
IF(AV) Average forward current δ = 0.5, square wave TC = 135 °C
3
A
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
75
A
PARM Repetitive peak avalanche power
tp = 10 µs
Tj = 125 °C
90
W
Tstg Storage temperature range
-65 to +150 °C
Tj
Maximum operating junction temperature (1)
150
°C
Notes:
(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Symbol
Rth(j-c) Junction to case
Rth(c) Coupling
Table 3: Thermal parameters
Parameter
Per diode
Per device
Max. value
5.5
3
0.5
Unit
°C/W
When the diodes 1 and 2 are used simultaneously:
ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
Symbol
IR(1)
VF(2)
Table 4: Static electrical characteristics (per diode)
Parameter
Test conditions
Min.
Tj = 25 °C
-
Reverse leakage current
VR = VRRM
Tj = 125 °C
-
Tj = 25 °C
-
IF = 3 A
Tj = 125 °C
-
Forward voltage drop
Tj = 25 °C
-
IF = 6 A
Tj = 125 °C
-
Typ.
2
0.50
0.67
Max.
100
10
0.63
0.57
0.84
0.72
Unit
µA
mA
V
Notes:
(1)Pulse test: tp = 5 ms, δ < 2%
(2)Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.42 x IF(AV) + 0.050 x IF2(RMS)
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