STPS640CB 查看數據表（PDF） - STMicroelectronics

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STPS640CB

Power Schottky rectifier

STMicroelectronics 

STPS640C

1.1

Characteristics (curves)

Figure 1: Average forward power dissipation

versus average forward current(per diode)

Characteristics

Figure 2: Average forward current versus ambient

temperature (per diode, δ = 0.5)

Figure 3: Normalized avalanche power derating

versus pulse duration (Tj = 125 °C)

Figure 4: Relative variation of thermal impedance

junction to case versus pulse duration

Figure 5: Reverse leakage current versus reverse

voltage applied (typical values, per diode)

Figure 6: Junction capacitance versus reverse

voltage applied (typical values, per diode)

DocID3628 Rev 9

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