100BGQ015 查看數據表（PDF） - Vishay Semiconductors

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100BGQ015

Schottky Rectifier, 100 A

Vishay Semiconductors 

100BGQ015

Vishay High Power Products Schottky Rectifier, 100 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

Forward voltage drop

VFM (1)

Maximum reverse leakage current

IRM (1)

Maximum junction capacitance

Typical series inductance

Maximum voltage rate of change

CT

LS

dV/dt

Note

(1) Pulse width < 300 µs, duty cycle < 2 %

TEST CONDITIONS

50 A

100 A

TJ = 25 °C

50 A

100 A

TJ = 125 °C

TJ = 100 °C, VR = 12 V

TJ = 125 °C, VR = 5 V

TJ = 25 °C

TJ = 100 °C

VR = Rated VR

VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C

Measured from tab to mounting plane

Rated VR

TYP. MAX.

0.36

0.4

0.45

0.52

0.27

0.31

0.39

0.45

480

700

1

1.2

7

18

580

870

3800

3.5

10 000

UNITS

V

mA

A

mA

pF

nH

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction temperature range

Maximum storage temperature range

Maximum thermal resistance,

junction to case

TJ

TStg

RthJC

DC operation

Maximum thermal resistance,

case to heatsink

RthCS

Mounting surface, smooth and greased

Approximate weight

Mounting torque

Marking device

minimum

maximum

Case style PowerTabTM

VALUES

- 55 to 125

- 55 to 150

UNITS

°C

0.50

°C/W

0.30

5

g

0.18

oz.

1.2 (10)

2.4 (20)

N·m

(lbf · in)

100BGQ015

www.vishay.com

2

For technical questions, contact: diodes-tech@vishay.com

Document Number: 94578

Revision: 30-Oct-08

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