BAY80 查看數據表（PDF） - Philips Electronics

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BAY80

General purpose diode

Philips Electronics 

Philips Semiconductors

General purpose diode

Product specification

BAY80

ELECTRICAL CHARACTERISTICS

Tj = 25 °C; unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

Cd

diode capacitance

trr

reverse recovery time

CONDITIONS

see Fig.3

IF = 0.1 mA

IF = 10 mA

IF = 50 mA

IF = 100 mA

IF = 150 mA

see Fig.5

VR = 120 V

VR = 120 V; Tj = 150 °C

f = 1 MHz; VR = 0; see Fig.6

when switched from IF = 30 mA to

IR = 30 mA; RL = 100 Ω;

measured at IR = 3 mA; see Fig.7

MIN. MAX. UNIT

450 550 mV

650 800 mV

730 920 mV

780 1000 mV

−

1.07 V

−

100 nA

−

100 µA

−

6 pF

−

50 ns

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-tp

Rth j-a

thermal resistance from junction to tie-point lead length 10 mm

thermal resistance from junction to ambient lead length 10 mm; note 1

Note

1. Device mounted on a printed circuit-board without metallization pad.

VALUE

240

375

UNIT

K/W

K/W

1996 Sep 18

3

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