BAY80 查看數據表（PDF） - Philips Electronics
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BAY80 Datasheet PDF : 6 Pages
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Philips Semiconductors
General purpose diode
Product specification
BAY80
103
handbook, halfpage
IR
(µA)
102
MGD009
10
1
10−1
10−2
0
100
Tj (oC)
200
VR = 120 V.
Solid line; maximum values.
Dotted line; typical values.
Fig.5 Reverse current as a function of junction
temperature.
1.6
handbook, halfpage
Cd
(pF)
1.4
1.2
1.0
0.8
0
MGD005
10
VR (V)
20
f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
handbook, full pagewidth
RS = 50 Ω
V = VR IF x R S
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
R i = 50 Ω
VR
MGA881
tr
tp
10%
90%
input signal
t
IF
t rr
t
(1)
output signal
(1) IR = 3 mA.
1996 Sep 18
Fig.7 Reverse recovery voltage test circuit and waveforms.
5
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