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10BQ030TR 查看數據表(PDF) - Vishay Semiconductors

零件编号
产品描述 (功能)
生产厂家
10BQ030TR
Vishay
Vishay Semiconductors Vishay
10BQ030TR Datasheet PDF : 5 Pages
1 2 3 4 5
10BQ030PbF
Schottky Rectifier, 1.0 A Vishay High Power Products
10
TJ = 125 °C
1
TJ = 25 °C
0.1
0
0.2
0.4
0.6
0.8
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
1
0.1
0.01
0.001
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.0001
0
10
20
30
VR - Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
1000
130
120
D = 0.20
110 D = 0.25
D = 0.33
D = 0.50
D = 0.75
100
Square wave (D = 0.50)
80 % rated VR applied
DC
See note (1)
90
0
0.4
0.8
1.2
1.6
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Average Forward Current vs. Allowable
Lead Temperature
0.5
D = 0.20
D = 0.25
0.4
D = 0.33
D = 0.50
D = 0.75
0.3
DC
0.2
RMS limit
0.1
0
0
0.4
0.8
1.2
1.6
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Average Forward Dissipation vs. Average
Forward Current
1000
TJ = 25 °C
100
100
At any rated load condition and
with rated VRRM applied
following surge
10
0
10
20
30
10
10
100
1000
10 000
VR - Reverse Voltage (V)
tp - Square Wave Pulse Duration (µs)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Document Number: 94111
Revision: 16-Apr-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3

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