1N60L-TND-R 查看數據表（PDF） - Unisonic Technologies
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1N60L-TND-R Datasheet PDF : 9 Pages
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1N60
TYPICAL CHARACTERISTICS (Cont.)
Power MOSFET
On-Resistance Variation vs. Drain
Current and Gate Voltage
30
TJ=25°С
25
20
VGS=10V
15
10
5
VGS=20V
0
0 0.5 1 1.5 2 2.5 3
Drain Current, ID (A)
On State Current vs. Allowable
Case Temperature
10
25°С
1
Notes:
1. VGS=0V
0.1
2. 250µs Test
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Source-Drain Voltage, VSD (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
8 of 9
QW-R502-052.P
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