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零件编号
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1SS154 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
1SS154
Silicon Epitaxial Schottky Barrier Type Diode
Toshiba
1SS154 Datasheet PDF : 3 Pages
1
2
3
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS154
UHF~S Band Mixer/Detector Applications
·
Small package.
Maximum Ratings
(Ta
=
25°C)
Characteristics
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Symbol
V
R
I
F
T
j
T
stg
Rating
Unit
6
V
30
mA
125
°C
-
30~125
°C
1SS154
Unit: mm
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Reverse voltage
Reverse current
Forward voltage
Forward voltage
Total capacitance
Symbol
V
R
I
R
V
F (1)
V
F (2)
C
T
Test Condition
I
R
=
10
m
A
V
R
=
5 V
I
F
=
0.1 mA
I
F
=
10 mA
V
R
=
0, f
=
1 MHz
Marking
JEDEC
―
JEITA
SC-59
TOSHIBA
1-3G1A
Weight: 0.012 g (typ.)
Min Typ. Max Unit
6
¾
¾
V
¾
¾
0.5
m
A
¾
¾
0.35
V
¾
0.5
¾
V
¾
0.8
¾
pF
1
2003-03-24
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