28C256TRPDE12 查看數據表（PDF） - MAXWELL TECHNOLOGIES
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28C256TRPDE12 Datasheet PDF : 14 Pages
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256K EEPROM (32K x 8-Bit) EEPROM
28C256T
PARAMETER
TABLE 7. 28C256T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION1
(VCC = 5V ±10%, TA = -55 TO 125 °C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN
MAX
UNITS
Address Access Time CE = OE = VIL, WE = VIH
-120
-150
CE to Output Delay OE = VIL, WE = VIH
-120
-150
OE to Output Delay CE = VIL, WE = VIH
-120
-150
Output Hold from Address CE = OE = VIL, WE = VIH
-120
-150
OE (CE) High to Output Float CE = VIL, WE = VIH 2
-120
-150
tACC
ns
--
120
--
150
tCE
ns
--
120
--
150
tOE
ns
0
50
0
75
tOH
0
0
ns
--
--
tDF
ns
0
45
0
50
1. Test conditions: Input pulse levels - 0V to 3V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
TABLE 8. 28C256T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND WRITE OPERATIONS
(VCC = 5V ±10%, TA = -55 TO 125 °C UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
MIN1
TYP
MAX
UNITS
Address Setup Time
-120
-150
CE to Write Setup Time
-120
-150
WE to Write Setup Time
-120
-150
WE Hold Time
-120
-150
tAS
ns
0
--
--
0
--
--
tCS 2
ns
0
--
--
0
--
--
tWS 3
ns
0
--
--
0
--
--
tWH 3
0
0
ns
--
--
1000584
12.19.01 Rev 5
All data sheets are subject to change without notice 4
©2001 Maxwell Technologies
All rights reserved.
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