2N1599 查看數據表（PDF） - Comset Semiconductors

零件编号

产品描述 (功能)

生产厂家

2N1599

SILICON THYRISTOR

Comset Semiconductors 

2N1595 thru 2N1599

Symbol

IDRM

IGT

VGT

IH

VTM

tgt

tq

Ratings

Peak Forward Blocking Current

(Rated VDRM with gate open , TJ

=125°C)

Gate Trigger Current (2)

Anode Voltage=7.0 Vdc, RL=12Ω

Gate Trigger Voltage

Anode Voltage=7.0 Vdc, RL=12Ω

VDRM = Rated, RL=100Ω, TJ=125°C

Holding Current

Anode Voltage=7.0 Vdc, gate open

2N1595 2N1596 2N1597 2N1598 2N1599

Max :1.0

mA

Typ : 2.0

Max : 10

mA

Typ : 0.7

Max : 3.0

V

Min : 0.2

Typ : 5.0

mA

Forward On Voltage

IT=1 Adc

Typ : 1.1

V

Max : 2.0

Turn-On Time (td+tr)

IGT=10 mA, IT=1 A

Typ : 0.8

µs

Turn-Off Time

IT=1 A, IR =1 A, dv/dt=20 V/µs,

TJ=125°C

Typ : 10

µs

VDRM = Rated Voltage

* VDRM or VRSM can be applied for all types on a continuous dc basis without incurring damage.

MECHANICAL DATA CASE TO-39

DIMENSIONS

mm inches

A

6,25 0,24

B

13,59 0,53

C

9,24 0,36

D

8,24 0,32

E

0,78 0,03

F

1,05 0,041

G

0,42 0,165

H

45°

L

5,1 0,2

Pin 1 :

Pin 2 :

Pin 3 :

Cathode

Gate

Anode

Information furnished is believed to be accurate and reliable. However, CS assumes no responsability

for the consequences of use of such information nor for errors that could appear.

Data are subject to change without notice.

COMSET SEMICONDUCTORS

2/2

Share Link: