2N4003K-TR8 查看數據表（PDF） - Weitron Technology

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产品描述 (功能)

生产厂家

2N4003K-TR8

N-Channel Enhancement Mode Power MOSFET

Weitron Technology 

2N4003K

Electrical Characteristics(TA=25°C Unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

Static

Drain-Source Breakdown Voltage

VGS =0, ID =100 A

Gate-Source Threshold Voltage3

VDS =VGS , ID=250 A

Gate-Source Leakage Current

VGS = ± 10V

Zero Gate Voltage Drain Current (TJ =25˚C)

VDS =30V,VGS =0

Drain-Source On-Resistance3

VGS =2.5V,ID= 10mA

VGS =4.0V,ID=10mA

Forward Transconductance3

VDS =3.0V, ID=10mA

V(BR)DSS

30

VG S(Th)

0.8

IGSS

-

IDSS

-

-

-

V

-

1.6

-

±1.0

-

1

RDS(on)

-

-

gfs

-

1.5

2.0

Ω

1.0

1.5

0.33

-

S

Dynamic

Input Capacitance

VGS=0V, VDS=5.0V, f=1.0MHz

Output Capacitance

VGS=0V, VDS=5.0V, f=1.0MHz

Reverse Transfer Capacitance

VGS=0V, VDS=5.0V, f=1.0MHz

Ciss

-

21

-

Coss

-

19.7

-

pF

Crss

-

8.1

-

WEITRON

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http://www.weitron.com.tw

08-Sep-09

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