2N7000CSM(2000) 查看數據表（PDF） - Semelab - > TT Electronics plc
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2N7000CSM Datasheet PDF : 2 Pages
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2N7000CSM
MECHANICAL DATA
Dimensions in mm (inches)
0.51 ± 0.10
(0.02 ± 0.004)
3
0.31
(0.012)
rad.
2
1
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
0.31
(0.012)
rad.
A = 1.02 ± 0.10
(0.04 ± 0.004)
A
1.40
(0.055)
max.
SOT23 CERAMIC
(LCC1 PACKAGE)
Underside View
PAD 1 – Gate PAD 2 – Source PAD 3 – Drain
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
• V(BR)DSS = 60V
W • RDS(ON) = 5
• ID = 200mA
• Hermetic Ceramic Surface Mount
package
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
60V
VGS
Gate – Source Voltage
±40V
ID
Drain Current
@ TCASE = 25°C
200mA
IDM
Pulsed Drain Current *
500mA
PD
Power Dissipation
@ TCASE = 25°C
300mW
Tj
Operating Junction Temperature Range
–55 to 150°C
Tstg
Storage Temperature Range
–55 to 150°C
* Pulse width limited by maximum junction temperature.
Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843.
E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 8/00
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