2N7000CSM(2000) 查看數據表（PDF） - Semelab - > TT Electronics plc
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2N7000CSM Datasheet PDF : 2 Pages
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2N7000CSM
ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC CHARACTERISTICS
V(BR)DSS Gate – Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
IGSS
Gate – Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
ID(on)* On–State Drain Current
RDS(on)* Drain – Source On Resistance
VDS(on)* Drain – Source On Voltage
gFS*
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = 0V
ID = 10mA
60
VDS = VGS ID = 0.25mA
0.8
VGS = ±20VVDS = 0V
VDS = 60V VGS = 0V
TCASE = 125°C
³ VDS 2VDS(ON) VGS = 4.5V
75
VGS = 10V
ID = 0.5A
TCASE = 125°C
VGS = 4.5V ID = 75mA
VGS = 10V ID = 0.5A
VGS = 10V ID = 0.5A
100
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
VDS = 25V
VGS = 0V
f = 1MHz
tON
Turn–On Time
tOFF
Turn–Off Time
VDD = 30V
RL = 150W
ID = 0.2A
VGEN = 10V
RG = 25W
* Pulse Test: PW = 80 ms , d £ 1%
Typ.
70
Max. Unit
V
3.0
-10 nA
1
mA
1
mA
mA
5
W
9
0.4
V
2.5
ms
60
25
pF
5
10
ns
10
RqJA
Parameter
Thermal Resistance, Junction to Ambient
Min.
Typ.
Max. Unit
416 °C/W
Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843.
E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 8/00
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