2SC2562 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2SC2562 Datasheet PDF : 5 Pages
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Base-emitter breakdown voltage
IC=10mA , IB=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.15A
VBEsat Base-emitter saturation voltage
IC=3A; IB=0.15A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE –1
DC current gain
VCB=50V; IE=0
VEB=5V; IC=0
IC=1A ; VCE=1V
hFE -2
DC current gain
IC=3A ; VCE=1V
fT
Transition frequency
IC=1A ; VCE=4V
Cob
Output capacitance
f=1MHz ; VCB=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A ;IB1=- IB2=0.15A
RL=10Ω,VCC=30V
hFE-1 Classifications
O
Y
70-140
120-240
Product Specification
2SC2562
MIN TYP. MAX UNIT
50
V
0.4
V
1.2
V
1
μA
1
μA
70
240
30
120
MHz
80
pF
0.1
μs
1.0
μs
0.1
μs
2
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