C4963 查看數據表（PDF） - Inchange Semiconductor
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C4963 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
VCE(sat) Collector-emitter saturation voltage IC=7A ; IB=1.4A
VBE(sat) Base-emitter saturation voltage
IC=7A ; IB=1.4A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
VCB=800V; IE=0
VEB=5V; IC=0
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=7A ; VCE=5V
Product Specification
2SC4963
MIN TYP. MAX UNIT
800
V
5.0
V
1.5
V
10 μA
50
250 mA
8
5
2
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