2SC5419 查看數據表（PDF） - Panasonic Corporation
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2SC5419 Datasheet PDF : 3 Pages
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Transistors
2SC5419
Silicon NPN triple diffusion planar type
For low-frequency output amplification
6.9±0.1
0.7 4.0
Unit: mm
2.5±0.1
(0.8)
■ Features
• High collector-emitter voltage (Base open) VCEO
• High transition frequency fT
0.65 max.
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e Collector-base voltage (Emitter open) VCBO
300
V
pe) Collector-emitter voltage (Base open) VCEO
300
V
nc d ge. ed ty Emitter-base voltage (Collector open) VEBO
7
V
sta tinu Collector current
IC
70
mA
a e cle con Peak collector current
lifecy d, dis Collector power dissipation *
ICP
100
mA
PC
1
W
n u duct type Junction temperature
Tj
150
°C
te tin Pro ed Storage temperature
Tstg −55 to +150 °C
four ntinu Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness
0.45+–00..0150
2.5±0.5
1.05±0.05
2.5±0.5
0.45+–00..0150
123
1: Emitter
2: Collector
3: Base
MT-2-A1 Package
in n s followliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
inc typ Collector-emitter voltage (Base open)
c tinued ance Emitter-base voltage (Collector open)
M is con inten Collector-emitter cutoff current (Base open)
/Dis ma Forward current transfer ratio *
D ance type, Collector-emitter saturation voltage
ten ce Transition frequency
ain nan Collector output capacitance
M inte (Common base, input open circuited)
VCEO
VEBO
ICEO
hFE
VCE(sat)
fT
Cob
IC = 100 µA, IB = 0
300
IE = 1 µA, IC = 0
7
VCE = 120 V, IB = 0
VCE = 10 V, IC = 5 mA
30
IC = 50 mA, IB = 5 mA
VCB = 10 V, IE = −10 mA, f = 200 MHz 50
VCB = 10 V, IE = 0, f = 1 MHz
V
V
1
µA
220
1.2
V
MHz
10
pF
d ma Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
(plane 2. *: Rank classification
Rank
P
Q
R
hFE
30 to 100
60 to 150 100 to 220
Publication date: February 2003
SJC00181CED
1
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