2SJ479L 查看數據表（PDF） - Renesas Electronics
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2SJ479L Datasheet PDF : 8 Pages
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2SJ479(L), 2SJ479(S)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
0.06
VGS = –4 V
0.04
ID = –20 A
–5 A, –10 A
0.02
–10 V
–5 A, –10 A, –20 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
10
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
5
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = –5 V
–10 V
ID = –30 A
–10
–25 V
–4
–20
VDS
VGS
–8
–30
VDD = –25 V
–12
–10 V
–5 V
–40
–16
–50
0
16 32 48 64
Gate Charge Qg (nc)
–20
80
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25°C
10
5
25°C
2
75°C
1
0.5
0.2
0.1
–0.1 –0.2 –0.5 –1 –2
VDS = –10 V
Pulse Test
–5 –10 –20 –50
Drain Current ID (A)
10000
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
Ciss
Coss
500
Crss
200 VGS = 0
f = 1 MHz
100
0
–4
–8
–12 –16 –20
Drain to Source Voltage VDS (V)
1000
Switching Characteristics
500
td(off)
200
100
tf
50
tr
td(on)
20
10
VGS = –10 V, VDD = –10 V
duty ≤ 1 %
5
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50
Drain Current ID (A)
Rev.3.00 Jun 05, 2006 page 4 of 7
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