2SK3134L 查看數據表（PDF） - Renesas Electronics
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2SK3134L Datasheet PDF : 9 Pages
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2SK3134(L), 2SK3134(S)
Static Drain to Source on State
Resistance vs. Temperature
20
Pulse Test
16
12
ID = 50 A
8
4V
10, 20 A
4
VGS = 10 V 10, 20, 50 A
0
–50 0
50 100 150 200
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
1000
500
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
200
100
50
20
10
0.1 0.3 1 3
10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
50
ID = 75 A
40
20
VGS
16
30
VDS
20
VDD = 20 V
10 V
12
5V
8
10
VDD = 20 V
4
10 V
5V
0
0
80 160 240 320 400
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
500
VDS = 10 V
200 Pulse Test
100
50
Tc = –25°C
20
10
5
2
1
0.5
0.1 0.3
25°C
75°C
1 3 10 30 100
Drain Current ID (A)
30000
10000
Typical Capacitance
vs. Drain to Source Voltage
Ciss
VGS = 0
f = 1 MHz
3000
1000
300
Coss
Crss
100
0
10
20 30 40
50
Drain to Source Voltage VDS (V)
1000
500
200
100
50
Switching Characteristics
td(off)
tf
tr
td(on)
20
VGS = 10 V, VDD = 10 V
PW = 5 µs, duty < 1 %
10
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current ID (A)
Rev.4.00 Sep 07, 2005 page 4 of 8
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