4N60L-T2Q-T 查看數據表（PDF） - Unisonic Technologies
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4N60L-T2Q-T Datasheet PDF : 8 Pages
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4N60
TYPICAL CHARACTERISTICS
Power MOSFET
On-State Characteristics
10
VGS
Top: 10V
9V
8V
7V
6V
5.5V
5 V Bottorm:5.0V
1
5.0V
0.1
Notes:
1. 250µs Pulse Test
2. TC=25°С
0.1
1
10
Drain-to-Source Voltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Transfer Characteristics
10
25°С
1 150°С
0.1
2
Notes:
1. VDS=50V
2. 250µs Pulse Test
4
6
8
10
Gate-Source Voltage, VGS (V)
6 of 8
QW-R502-061,Q
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