HS-1245RH 查看數據表（PDF） - Intersil
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HS-1245RH Datasheet PDF : 4 Pages
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Burn-In Circuit
HS-1245RH
HS-1245RH CERDIP
R2
D4
V-
R1
1
-
14
+
2
13
R1
3
12
4
11
D2
C2
5
10
R1
6
9
+
7
-
8
R1
D3
C1
V+
D1
R2
NOTES:
1. R1
= 1kΩ, ±5%, 1/4W min (Per Socket)
2. R2
= 10kΩ, ±5%, 1/4W min (Per Socket)
3. C1
= 0.01µF (Per Socket) or 0.1µF (Per Row) Minimum
4. D1, D2 = 1N4002 or Equivalent (Per Board)
5. D3, D4 = 1N4002 or Equivalent (Per Socket)
6. (-V) + (+V) = 11V ±1.0V
7. 10mA < (ICC, IEE) < 16mA
8. -750mV < VOUT < +750mV
Irradiation Circuit
HS-1245RH CERDIP
R2
R1
1
-
14
+
2
13
R1
3
12
V-
4
11
V+
C1
5
R1
10
C1
6
9
+
7
-
8
R1
R2
NOTES:
9. R1 = 1kΩ, ±5%
10. R2 = 10kΩ, ±5%
11. C1 = 0.01µF
12. V+ = +5.0V ±0.5V
13. V- = -5.0V ±0.5V
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