72425 查看數據表（PDF） - Vishay Semiconductors
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72425 Datasheet PDF : 3 Pages
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SPICE Device Model SUP80N15-20L
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Forward Voltagea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = VGS, ID = 250 µA
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A, TJ = 125°C
VGS = 10 V, ID = 30 A, TJ = 175°C
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 30 A
IS = 80 A, VGS = 0 V
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 50 V, VGS = 10 V, ID = 80 A
VDD = 50 V, RL = 0.93 Ω
ID ≅ 80 A, VGEN = 10 V, RG = 2.5 Ω
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Simulated Measured
Data
Data
1.7
314
0.016
0.023
0.026
0.017
93
0.92
0.016
1
6590
510
320
114
21
33
176
43
43
49
6500
520
270
110
21
33
20
100
70
135
Unit
V
A
Ω
S
V
Pf
NC
Ns
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Document Number: 72425
12-Jun-04
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