7MBR100U4B120 查看數據表（PDF） - Fuji Electric
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7MBR100U4B120 Datasheet PDF : 15 Pages
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[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
200
VGE=20V 15V 12V
150
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
200
VGE=20V 15V
12V
150
100
10V
50
8V
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
200
Tj=25°C
150
Tj=125°C
100
50
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
100.0
Cies
10.0
100
10V
50
0
0
8V
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
Ic=150A
2
Ic=75A
Ic=37.5A
0
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=600V， Ic=100A，Tj= 25°C
VGE
1.0
0.1
0
Cres
Coes
10
20
30
Collector-Emitter voltage : VCE [V]
0
0
VCE
100
200
300
400
Gate charge : Qg [nC]
MS6M0856
10
15
H04-004-03a
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