29103BRA 查看數據表（PDF） - Intersil
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29103BRA Datasheet PDF : 8 Pages
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HM-65262
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V
Input or Output Voltage Applied for all grades . . . . . -0.3V to VCC +0.3V
Typical Derating Factor. . . . . . . . . . . . . . . .5mA/MHz Increase in ICCOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Information
Thermal Resistance (Typical)
CERDIP Package. . . . . . . . . . . . . . . . . .
θJA
66oC/W
θJC
13oC/W
CLCC Package . . . . . . . . . . . . . . . . . . . 75oC/W
18oC/W
Maximum Storage Temperature Range . . . . . . . . . . . . -65oC to +150oC
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . +300oC
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26256 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range
HM-65262B-9, HM-65262-9, HM-65262C-9 . . . . .-40oC to +85oC
DC Electrical Specifications VCC = 5V ±10%; TA = -40oC to +85oC (HM-65262B-9, HM-65262-9, HM-65262C-9)
LIMITS
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
ICCSB1 Standby Supply Current
ICCSB
ICCEN
ICCOP
Standby Supply Current
Enabled Supply Current
Operating Supply Current (Note 1)
ICCDR Data Retention Supply Current
ICCDR1 Data Retention Supply Current
VCCDR Data Retention Supply Voltage
-od
50
µA
HM-65262B-9, HM-65262-9, IO = 0mA,
E = VCC -0.3V, VCC = 5.5V
-
900
µA
HM-65262C-9, IO = 0mA,
E = VCC -0.3V, VCC = 5.5V
-
5
mA
E = 2.2V, IO = 0mA, VCC = 5.5V
-
50
mA
E = 0.8V, IO = 0mA, VCC = 5.5V
-
50
mA
E = 0.8V, IO = 0mA, f = 1MHz,
VCC = 5.5V
-
20
µA
HM-65262B-9, HM-65262-9,
VCC = 2.0V, E = VCC
-
400
µA
HM-65262C-9, VCC = 2.0V, E = VCC
-
30
µA
HM-65262B-9, HM-65262-9,
VCC = 3.0V, E = VCC
-
550
µA
HM-65262C-9, VCC = 3.0V, E = VCC
2.0
-
V
II
IOZ
VIL
VIH
VOL
VOH1
VOH2
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output High Voltage (Note 2)
-1.0
-1.0
-0.3
2.2
-
2.4
VCC -0.4
+1.0
+1.0
0.8
VCC +0.3
0.4
-
-
µA
VI = VCC or GND, VCC = 5.5V
µA
VIO = VCC or GND, VCC = 5.5V
V
VCC = 4.5V
V
VCC = 5.5V
V
IO = 8.0mA, VCC = 4.5V
V
IO = -4.0mA, VCC = 4.5V
V
IO = -100µA, VCC = 4.5V
Capacitance TA = +25oC
SYMBOL
PARAMETER
CI
Input Capacitance (Note 2)
CIO
Input/Output Capacitance (Note 2)
NOTES:
1. Typical derating 5mA/MHz increase in ICCOP.
2. Tested at initial design and after major design changes.
MAX
10
12
UNITS
pF
pF
TEST CONDITIONS
f = 1MHz, All measurements are
referenced to device GND
3
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