A3195EU 查看數據表（PDF） - Allegro MicroSystems

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A3195EU

PROTECTED, HIGH-TEMPERATURE, HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN

Allegro MicroSystems 

3195

PROTECTED, HIGH-TEMP.,

ACTIVE PULL-DOWN

HALL-EFFECT LATCH

3.8 V TO 26 V

WITH TRANSIENTS

VCC

1

X

C BYPASS

2

3

TO µP

CL

RL

Dwg. EH-007

OPERATION

In operation, the output transistor is OFF

until the strength of the magnetic field

perpendicular to the surface of the chip

exceeds the threshold or operate point (BOP).

When the field strength exceeds BOP, the

output transistor switches ON (a logic low)

and is capable of sinking 35 mA of current.

The output transistor switches OFF (a

logic high) when magnetic field reversal

results in a magnetic flux density below the

OFF threshold (BRP). This is illustrated in the

transfer characteristics graph. Note that the

device latches; that is, a south pole of

sufficient strength will turn the device ON.

Removal of the south pole will leave the

device ON. The presence of a north pole of

sufficient strength is required to turn the

device OFF.

The switch points increase in sensitivity

with increasing temperature to compensate

for the typical ferrite magnet temperature

characteristic. The simplest form of magnet

that will operate these devices is a ring

magnet. Other methods of operation are

possible.

TEST CIRCUIT AND

TYPICAL APPLICATION

An external 0.1 µF to 0.47 µF capacitor, with good high-frequency

characteristics, should be connected between terminals 1 and 2 to

bypass high-voltage noise and reduce EMI susceptibility.

Internal Pull-Down Resistor. An internal pull-down resistor

(nominal 15 kΩ) is provided to allow testing of the device without the

need for an external load.

20

18

16

14

12

10

-50

-25

0

25

50

75

100

AMBIENT TEMPERATURE IN °C

125

150

Dwg. GH-060

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