ADP3208C 查看數據表（PDF） - ON Semiconductor
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ADP3208C Datasheet PDF : 41 Pages
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Parameter
DPRSTP
Input Voltage
Symbol
Input Current
VARFREQ, SP
Input Voltage
Input Current
EN INPUT
Input Voltage
Input Current
CLKEN OUTPUT
Output Low Voltage
Output High, Leakage
Current
THERMAL MONITORING
and PROTECTION
TTSNS Voltage Range2
TTSNS Threshold
TTSNS Hysteresis
TTSNS Bias Current
VRTT Output Voltage
VVRTT
SUPPLY
Supply Voltage Range
VCC
Supply Current
VCC OK Threshold
VCC UVLO Threshold
VCC Hysteresis2
HIGH-SIDE MOSFET DRIVER
Pull-up Resistance, Sourcing
Current
Pull-down Resistance, Sinking
Current
Transition Times
Dead Delay Times
BST Quiescent Current
VCCOK
VCCUVLO
trDRVH,
tfDRVH
tpdhDRVH
LOW-SIDE MOSFET DRIVER
Pull-up Resistance, Sourcing
Current
Pull-down Resistance, Sinking
Current
Conditions
Refers to driving signal level
Logic low, Isink ≥ 1 μA
Logic high, Isource ≤ -5 μA
Refers to driving signal level
Logic low, Isink ≥ 1 μA
Logic high, Isource ≤ -5 μA
Refers to driving signal level
Logic low, Isink ≥ 1 μA
Logic high, Isource ≤ -5 μA
EN = L or EN = H (static)
0.8 V < EN < 1.6 V (during transition)
Logic low, Isink = 4 mA
Logic high, VCLKEN = VCC
VCC = 5 V, TTSNS is falling
TTSNS = 2.6 V
Logic low, IVRTT(SINK) = 400 μA
Logic high, IVRTT(SOURCE) = -400 μA
EN = H
EN = 0 V
VCC is rising
VCC is falling
BST = PVCC
BST = PVCC
BST = PVCC, CL = 3 nF, Figure 2
BST = PVCC, CL = 3 nF, Figure 2
BST = PVCC, Figure 2
EN = L (Shutdown)
EN = H, no switching
Rev. 1 | Page 7 of 41 | www.onsemi.com
ADP3208C
Min Typ
Max Units
0.7
1
0.3 V
V
μA
4
1
0.7 V
V
μA
2.3
10
70
50
1
V
V
nA
μA
100 mV
1
μA
0
2.45 2.5
50 110
−2
10
4
5
4.5
6.2
15
4.3
4.0 4.1
210
1.8
1.0
15
13
39
0.6
15
1.6
0.8
5
V
2.55 V
mV
2
μA
100 mV
V
5.5 V
10 mA
50 μA
4.5 V
V
mV
3.3 Ω
3
Ω
35 ns
31 ns
60 ns
5
μA
μA
3.3 Ω
2.5 Ω
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