AH276Z4-AE1 查看數據表（PDF） - BCD Semiconductor
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AH276Z4-AE1 Datasheet PDF : 10 Pages
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COMPLEMENTARY OUTPUT HALL EFFECT LATCH
Magnetic Characteristics (Continued)
Data Sheet
AH276
S
Marking Side
N
+14V
AH276
VCC DO DOB GND
1234
R1
820Ω
R2
820Ω
C1 C2
20pF 20pF
DO (VOUT1)
DOB (VOUT2)
Figure 4. Basic Test Circuit
V
CC
-40
DO (V)
16
14
12
10
8
6
4
2
-20
0
20
Magnetic Flux Density B (Gauss)
V
SAT
40
Figure 5. VDO vs. Magnetic Flux Density
V
SAT
-40
DOB (V)
16
14
12
10
8
6
4
2
-20
0
20
Magnetic Flux Density B (Gauss)
V
CC
40
Figure 6. VDOB vs. Magnetic Flux Density
Nov. 2009 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
6
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