AH211 查看數據表（PDF） - BCD Semiconductor
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AH211 Datasheet PDF : 11 Pages
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Data Sheet
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT
AH211
Electrical Characteristics
(TA=25oC, VCC=14V, unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Output Saturation Voltage
VSAT
B>150Gauss, VCC=3.5V,
VDOB=VCC, IDO=100mA
(or B<-150Gauss, VCC=3.5V,
VDO=VCC, IDOB=100mA)
B>150Gauss,
VDOB=VCC, IDO=400mA
(or B<-150Gauss, VDO=VCC,
IDOB=400mA)
1.1
V
1.05
1.3
V
FG Saturation Voltage
FG Leakage Current
Supply Current
Output Rise Time
Output Fall Time
Switch Time Differential
Output Zener Breakdown Voltage
VSATF
IOLF
ICC
tr
tf
∆t
VZ
B<-150Gauss, VDO=VCC,
IFG=20mA
B>150Gauss, VDOB=VCC,
VFG=16V
B>150Gauss, VDOB=VCC,
(or B<-150Gauss, VDO=VCC )
RL=1kΩ, CL=10pF
RL=1kΩ, CL=10pF
RL=1kΩ, CL=10pF
0.35
0.6
V
0.1
10
µA
8
10
mA
3.0
10
µs
0.3
1.0
µs
3.0
10
µs
55
V
Magnetic Characteristics
(TA=25oC)
Parameter
Symbol
Grade
Min
Typ
Max
Unit
Operating Point
BOP
A
5
30
60
Gauss
B
90
Gauss
Releasing Point
BRP
A
-60
-30
-5
Gauss
B
-90
Gauss
Hysteresis
BHYS
60
Gauss
Mar. 2007 Rev. 1.3
BCD Semiconductor Manufacturing Limited
5
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