AM27C010-90JI 查看數據表（PDF） - Advanced Micro Devices
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AM27C010-90JI Datasheet PDF : 12 Pages
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Output OR-Tieing
To accommodate multiple memory connections, a
two-line control function is provided to allow for:
s Low memory power dissipation
s Assurance that output bus contention will not occur
It is recommended that CE be decoded and used as
the primary device-selecting function, while OE be
made a common connection to all devices in the array
and connected to the READ line from the system con-
trol bus. This assures that all deselected memory de-
vices are in their low-power standby mode and that the
outut pins are only active when data is desired from a
particular memory device.
System Applications
During the switch between active and standby condi-
tions, transient current peaks are produced on the
rising and falling edges of Chip Enable. The magni-
tude of these transient current peaks is dependent on
the output capacitance loading of the device. At a min-
imum, a 0.1 µF ceramic capacitor (high frequency, low
inherent inductance) should be used on each device
between VCC and VSS to minimize transient effects. In
addition, to overcome the voltage drop caused by the
inductive effects of the printed circuit board traces on
EPROM arrays, a 4.7 µF bulk electrolytic capacitor
should be used between VCC and VSS for each eight
devices. The location of the capacitor should be close
to where the power supply is connected to the array.
MODE SELECT TABLE
Mode
Pins
CE
OE
PGM
A0
A9
VPP Outputs
Read
VIL
VIL
X
X
X
X
DOUT
Output Disable
X
VIH
X
X
X
X
High-Z
Standby (TTL)
VIH
X
X
X
X
X
High-Z
Standby (CMOS)
VCC ± 0.3 V
X
X
X
X
X
High-Z
Program
VIL
VIH
VIL
X
X
VPP
DIN
Program Verify
VIL
VIL
VIH
X
X
VPP
DOUT
Program Inhibit
VIH
X
X
X
X
VPP
High-Z
Auto Select
(Note 3)
Manufacturer Code
VIL
Device Code
VIL
VIL
X
VIL
VH
X
01H
VIL
X
VIH
VH
X
0E
Notes:
1. VH = 12.0 V ± 0.5 V.
2. X = Either VIH or VIL.
3. A1–A8 = A10–A16 = VIL.
4. See DC Programming Characteristics for VPP voltage during programming.
Am27C010
7
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