BD8166EFV-E2 查看數據表（PDF） - ROHM Semiconductor
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BD8166EFV-E2 Datasheet PDF : 21 Pages
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BD8166EFV
Technical Note
●Electrical characteristics (Unless otherwise specified, Ta = 25℃, VCC = 15 V, Ta = 25℃)
3. Gate Shading Block
Parameter
Symbol
Min.
Limit
Typ.
Unit
Max.
[Output block Vo2GS and GSOUT]
Conditions
N-channel on resistance
Ron_NGS
—
10
15
Ω Io = 20 mA*
P-channel on resistance
Ron_PGS
—
55
80
Ω Io = 20 mA*
N-channel leak current
ILEAK_NGS
—
—
10
µA
P-channel leak current
[Input block IG]
ILEAK_PGS
—
—
10
µA
IGH voltage
IGH
1.9
2.9
5
V
IGL voltage
LGL
—
0
0.9
V
IG sinking current
IIG
8
16.5
25
µA IG = 3.3 V
4. Overall
Parameter
Symbol
[Reference voltage block VREF]
Reference voltage
VREF
Load stability
∆V
[Regulator circuit block VREG]
REG output voltage
VREG
Load stability
∆V
[Oscillator block]
Frequency
Fosc
[Protection detection block FAULT]
Off-leak current
IFL
On resistance
Ron_FL
[Short protection block SCP]
SCP lease current
Iscp
Threshold voltage
Vth_scp
Off sinking current
[VCOM block]
IOFFS
Input offset voltage
Voso
Input bias current
Ibo
Drive current
Ioo
Slew rate
SRo
GB product
GBW
High output voltage
Voho
Low output voltage
Vohl
[Low voltage protection circuit]
Detection voltage
VUVLO
[Overall]
Average current consumption
Icc
Min.
2.84
—
4.5
—
400
—
—
6
0.96
1
-10
—
50
5
—
Vol-0.3
—
4.8
3.0
Limit
Typ.
2.90
5
5.0
50
500
—
1
10
1.2
3
0
0.1
100
12
12
Vol-0.1
0.1
5.1
4.5
Max.
2.96
20
5.5
100
600
10
—
14
1.44
—
10
1
350
—
—
—
0.3
5.4
6.0
Unit
Conditions
V
mV IREF = 1 mA
V
mV IREG = 10 mA
kHz
µA
kΩ
µA
V
mA SCP = 0.5 V
mV
µA
mA
V/MS
MHz
V Io = -5 mA
V Io = 5 mA
V
mA Standby current
○Design guarantee (No total shipment inspection is made.)
*This product is not designed for protection against radio active rays.
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© 2009 ROHM Co., Ltd. All rights reserved.
3/17
2015.12 - Rev.C
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